IXFB300N10P hiperfet equivalent, polar power mosfet hiperfet.
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* Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance
G D
(TAB)
S
G = Gate S = Source
D = Drain TAB = Drain
Advantage.
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = .
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